IndiumV3, Main, Repository, bibRecord, 002577

Self-assembled InAs quantum dots on anti-phase domains of GaAs on Ge substrates

Identifieur interne : 002577 ( Main/Repository ); précédent : 002576; suivant : 002578

Self-assembled InAs quantum dots on anti-phase domains of GaAs on Ge substrates

Auteurs : RBID : Pascal:11-0330600

Descripteurs français

Pascal (Inist)
- Autoassemblage, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Point quantique, Nanomatériau, Epitaxie jet moléculaire, Microscopie force atomique, Effet dimensionnel, Arséniure de gallium, Anisotropie, Photoluminescence, Plan expérience, Couche tampon, Nanostructure, Germanium, InAs, Substrat GaAs, Substrat germanium, GaAs, 8116D, 8105E, 8107T, 8535B.

English descriptors

KwdEn :
- Anisotropy, Atomic force microscopy, Buffer layer, Experimental design, Gallium arsenides, Germanium, III-V compound, III-V semiconductors, Indium arsenides, Molecular beam epitaxy, Nanostructured materials, Nanostructures, Photoluminescence, Quantum dots, Self-assembly, Size effect.

Abstract

The authors report the formation of self-assembled InAs quantum dots (QDs) grown on GaAs/Ge substrates having anti-phase domains (APDs) by molecular beam epitaxy. The AFM images of InAs QDs grown on different GaAs thicknesses are shown and compared. The samples with InAs coverage of 1.80 MLs with GaAs thickness of 300 and 700 nm show non-uniformed size distribution of the dots. Due to anisotropic property of quantum dots, ellipsoidal quantum dots appear. Unexpectedly, most of InAs quantum dots align perpendicularly to anti-phase boundary (APB) and to quantum dot alignment formed in adjacent domains. Photoluminescence spectrum excited by 20 mW 476-nm Ar⁺ laser at 20 K does not show emission peak of InAs QDs. This is due to defects in the GaAs buffer layer.

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Pascal:11-0330600

Le document en format XML

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<author><name sortKey="Tantiweerasophon, W" uniqKey="Tantiweerasophon W">W. Tantiweerasophon</name>
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<author><name sortKey="Changmuang, P" uniqKey="Changmuang P">P. Changmuang</name>
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<author><name sortKey="Rattanathammaphan, S" uniqKey="Rattanathammaphan S">S. Rattanathammaphan</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The Semiconductor Device Research Laboratory (SDRL), CoE Nanotechnology Center of Thailand, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Phayathai Road</s1>
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<author><name sortKey="Panyakeow, S" uniqKey="Panyakeow S">S. Panyakeow</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The Semiconductor Device Research Laboratory (SDRL), CoE Nanotechnology Center of Thailand, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Phayathai Road</s1>
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<title level="j" type="abbreviated">J. cryst. growth</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anisotropy</term>
<term>Atomic force microscopy</term>
<term>Buffer layer</term>
<term>Experimental design</term>
<term>Gallium arsenides</term>
<term>Germanium</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Molecular beam epitaxy</term>
<term>Nanostructured materials</term>
<term>Nanostructures</term>
<term>Photoluminescence</term>
<term>Quantum dots</term>
<term>Self-assembly</term>
<term>Size effect</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Autoassemblage</term>
<term>Arséniure d'indium</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Point quantique</term>
<term>Nanomatériau</term>
<term>Epitaxie jet moléculaire</term>
<term>Microscopie force atomique</term>
<term>Effet dimensionnel</term>
<term>Arséniure de gallium</term>
<term>Anisotropie</term>
<term>Photoluminescence</term>
<term>Plan expérience</term>
<term>Couche tampon</term>
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<term>Germanium</term>
<term>InAs</term>
<term>Substrat GaAs</term>
<term>Substrat germanium</term>
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<term>8116D</term>
<term>8105E</term>
<term>8107T</term>
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<front><div type="abstract" xml:lang="en">The authors report the formation of self-assembled InAs quantum dots (QDs) grown on GaAs/Ge substrates having anti-phase domains (APDs) by molecular beam epitaxy. The AFM images of InAs QDs grown on different GaAs thicknesses are shown and compared. The samples with InAs coverage of 1.80 MLs with GaAs thickness of 300 and 700 nm show non-uniformed size distribution of the dots. Due to anisotropic property of quantum dots, ellipsoidal quantum dots appear. Unexpectedly, most of InAs quantum dots align perpendicularly to anti-phase boundary (APB) and to quantum dot alignment formed in adjacent domains. Photoluminescence spectrum excited by 20 mW 476-nm Ar<sup>+</sup>
 laser at 20 K does not show emission peak of InAs QDs. This is due to defects in the GaAs buffer layer.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Self-assembled InAs quantum dots on anti-phase domains of GaAs on Ge substrates</s1>
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<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 16th International Conference on Molecular Beam Epitaxy (MBE 2010), Berlin, Germany, 22-27 August, 2010</s1>
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<fA14 i1="01"><s1>The Semiconductor Device Research Laboratory (SDRL), CoE Nanotechnology Center of Thailand, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Phayathai Road</s1>
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<fC01 i1="01" l="ENG"><s0>The authors report the formation of self-assembled InAs quantum dots (QDs) grown on GaAs/Ge substrates having anti-phase domains (APDs) by molecular beam epitaxy. The AFM images of InAs QDs grown on different GaAs thicknesses are shown and compared. The samples with InAs coverage of 1.80 MLs with GaAs thickness of 300 and 700 nm show non-uniformed size distribution of the dots. Due to anisotropic property of quantum dots, ellipsoidal quantum dots appear. Unexpectedly, most of InAs quantum dots align perpendicularly to anti-phase boundary (APB) and to quantum dot alignment formed in adjacent domains. Photoluminescence spectrum excited by 20 mW 476-nm Ar<sup>+</sup>
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Self-assembled InAs quantum dots on anti-phase domains of GaAs on Ge substrates

Self-assembled InAs quantum dots on anti-phase domains of GaAs on Ge substrates

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English descriptors

Abstract

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